India Achieves Breakthrough in Indigenous Silicon Carbide and GaN-based MMIC Technology for Defence and Aerospace Applications.

New Delhi:

The Solid State Physics Laboratory (SSPL), a DRDO (Defence Research and Development Organisation) laboratory, has successfully developed indigenous technologies for growing 4-inch diameter Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) with outputs up to 150W. The lab has also pioneered the creation of Monolithic Microwave Integrated Circuits (MMICs) capable of handling up to 40W power for use in applications up to X-band frequencies.

This technological breakthrough is set to revolutionize sectors ranging from defence and aerospace to clean energy by offering improved efficiency, reduced size, and enhanced performance. GaN/SiC technology, which is central to next-generation radar systems, electronic warfare, and green energy solutions, is becoming critical for the future of both military and commercial applications. It promises more compact and efficient power supplies for advanced combat systems, unmanned vehicles, space applications, and renewable energy solutions.

The successful establishment of limited production capabilities for GaN-on-SiC MMICs at GAETEC, Hyderabad, marks a significant milestone for India in semiconductor technology. These multifunctional MMICs cater to a range of strategic needs, including space missions, 5G/satellite communications, and aerospace innovations. This achievement underlines India’s growing self-reliance in advanced semiconductor technologies and supports the nation’s ‘Aatmanirbhar Bharat’ (self-reliant India) vision.